zephyr/drivers/flash/flash_stm32f4x.c
Francois Ramu 7795558ad5 drivers: flash: stm32 flash base address from the DTS node
For the flash driver, the base address is the MCU internal flash
address (usually 0x8000000). This PR gets the that address
from the device tree node "st,stm32-nv-flash"
instead of relying on the CONFIG_FLASH_BASE_ADDRESS
which might differ when building for another flash memory.

Signed-off-by: Francois Ramu <francois.ramu@st.com>
2024-01-29 14:12:47 -06:00

480 lines
12 KiB
C

/*
* Copyright (c) 2017 Linaro Limited
* Copyright (c) 2023 Google Inc
*
* SPDX-License-Identifier: Apache-2.0
*/
#include <string.h>
#include <zephyr/device.h>
#include <zephyr/drivers/flash.h>
#include <zephyr/init.h>
#include <zephyr/kernel.h>
#include <zephyr/logging/log.h>
#include <zephyr/sys/barrier.h>
#include <soc.h>
#include "flash_stm32.h"
LOG_MODULE_REGISTER(flash_stm32f4x, CONFIG_FLASH_LOG_LEVEL);
#if FLASH_STM32_WRITE_BLOCK_SIZE == 8
typedef uint64_t flash_prg_t;
#define FLASH_PROGRAM_SIZE FLASH_PSIZE_DOUBLE_WORD
#elif FLASH_STM32_WRITE_BLOCK_SIZE == 4
typedef uint32_t flash_prg_t;
#define FLASH_PROGRAM_SIZE FLASH_PSIZE_WORD
#elif FLASH_STM32_WRITE_BLOCK_SIZE == 2
typedef uint16_t flash_prg_t;
#define FLASH_PROGRAM_SIZE FLASH_PSIZE_HALF_WORD
#elif FLASH_STM32_WRITE_BLOCK_SIZE == 1
typedef uint8_t flash_prg_t;
#define FLASH_PROGRAM_SIZE FLASH_PSIZE_BYTE
#else
#error Write block size must be a power of 2, from 1 to 8
#endif
bool flash_stm32_valid_range(const struct device *dev, off_t offset,
uint32_t len,
bool write)
{
ARG_UNUSED(write);
#if (FLASH_SECTOR_TOTAL == 12) && defined(FLASH_OPTCR_DB1M)
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
/*
* RM0090, table 7.1: STM32F42xxx, STM32F43xxx
*/
if (regs->OPTCR & FLASH_OPTCR_DB1M) {
/* Device configured in Dual Bank, but not supported for now */
return false;
}
#endif
return flash_stm32_range_exists(dev, offset, len);
}
static inline void flush_cache(FLASH_TypeDef *regs)
{
if (regs->ACR & FLASH_ACR_DCEN) {
regs->ACR &= ~FLASH_ACR_DCEN;
/* Datasheet: DCRST: Data cache reset
* This bit can be written only when the data cache is disabled
*/
regs->ACR |= FLASH_ACR_DCRST;
regs->ACR &= ~FLASH_ACR_DCRST;
regs->ACR |= FLASH_ACR_DCEN;
}
if (regs->ACR & FLASH_ACR_ICEN) {
regs->ACR &= ~FLASH_ACR_ICEN;
/* Datasheet: ICRST: Instruction cache reset :
* This bit can be written only when the instruction cache
* is disabled
*/
regs->ACR |= FLASH_ACR_ICRST;
regs->ACR &= ~FLASH_ACR_ICRST;
regs->ACR |= FLASH_ACR_ICEN;
}
}
static int write_value(const struct device *dev, off_t offset, flash_prg_t val)
{
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
#if defined(FLASH_OPTCR_DB1M)
bool dcache_enabled = false;
#endif /* FLASH_OPTCR_DB*/
uint32_t tmp;
int rc;
/* if the control register is locked, do not fail silently */
if (regs->CR & FLASH_CR_LOCK) {
return -EIO;
}
rc = flash_stm32_wait_flash_idle(dev);
if (rc < 0) {
return rc;
}
#if defined(FLASH_OPTCR_DB1M)
/*
* Disable the data cache to avoid the silicon errata ES0206 Rev 16 2.2.12:
* "Data cache might be corrupted during Flash memory read-while-write operation"
*/
if (regs->ACR & FLASH_ACR_DCEN) {
dcache_enabled = true;
regs->ACR &= (~FLASH_ACR_DCEN);
}
#endif /* FLASH_OPTCR_DB1M */
regs->CR &= CR_PSIZE_MASK;
regs->CR |= FLASH_PROGRAM_SIZE;
regs->CR |= FLASH_CR_PG;
/* flush the register write */
tmp = regs->CR;
*((flash_prg_t *)(offset + FLASH_STM32_BASE_ADDRESS)) = val;
rc = flash_stm32_wait_flash_idle(dev);
regs->CR &= (~FLASH_CR_PG);
#if defined(FLASH_OPTCR_DB1M)
/* Reset/enable the data cache if previously enabled */
if (dcache_enabled) {
regs->ACR |= FLASH_ACR_DCRST;
regs->ACR &= (~FLASH_ACR_DCRST);
regs->ACR |= FLASH_ACR_DCEN;
}
#endif /* FLASH_OPTCR_DB1M */
return rc;
}
static int erase_sector(const struct device *dev, uint32_t sector)
{
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
uint32_t tmp;
int rc;
/* if the control register is locked, do not fail silently */
if (regs->CR & FLASH_CR_LOCK) {
return -EIO;
}
rc = flash_stm32_wait_flash_idle(dev);
if (rc < 0) {
return rc;
}
/*
* If an erase operation in Flash memory also concerns data
* in the instruction cache, the user has to ensure that these data
* are rewritten before they are accessed during code execution.
*/
flush_cache(regs);
#if FLASH_SECTOR_TOTAL == 24
/*
* RM0090, §3.9.8: STM32F42xxx, STM32F43xxx
* RM0386, §3.7.5: STM32F469xx, STM32F479xx
*/
if (sector >= 12) {
/* From sector 12, SNB is offset by 0b10000 */
sector += 4U;
}
#endif
regs->CR &= CR_PSIZE_MASK;
regs->CR |= FLASH_PROGRAM_SIZE;
regs->CR &= ~FLASH_CR_SNB;
regs->CR |= FLASH_CR_SER | (sector << 3);
regs->CR |= FLASH_CR_STRT;
/* flush the register write */
tmp = regs->CR;
rc = flash_stm32_wait_flash_idle(dev);
regs->CR &= ~(FLASH_CR_SER | FLASH_CR_SNB);
return rc;
}
int flash_stm32_block_erase_loop(const struct device *dev,
unsigned int offset,
unsigned int len)
{
struct flash_pages_info info;
uint32_t start_sector, end_sector;
uint32_t i;
int rc = 0;
rc = flash_get_page_info_by_offs(dev, offset, &info);
if (rc) {
return rc;
}
start_sector = info.index;
rc = flash_get_page_info_by_offs(dev, offset + len - 1, &info);
if (rc) {
return rc;
}
end_sector = info.index;
for (i = start_sector; i <= end_sector; i++) {
rc = erase_sector(dev, i);
if (rc < 0) {
break;
}
}
return rc;
}
int flash_stm32_write_range(const struct device *dev, unsigned int offset,
const void *data, unsigned int len)
{
int i, rc = 0;
flash_prg_t value;
for (i = 0; i < len / sizeof(flash_prg_t); i++) {
value = UNALIGNED_GET((flash_prg_t *)data + i);
rc = write_value(dev, offset + i * sizeof(flash_prg_t), value);
if (rc < 0) {
return rc;
}
}
return rc;
}
static __unused int write_optb(const struct device *dev, uint32_t mask,
uint32_t value)
{
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
int rc;
if (regs->OPTCR & FLASH_OPTCR_OPTLOCK) {
return -EIO;
}
if ((regs->OPTCR & mask) == value) {
return 0;
}
rc = flash_stm32_wait_flash_idle(dev);
if (rc < 0) {
return rc;
}
regs->OPTCR = (regs->OPTCR & ~mask) | value;
regs->OPTCR |= FLASH_OPTCR_OPTSTRT;
/* Make sure previous write is completed. */
barrier_dsync_fence_full();
rc = flash_stm32_wait_flash_idle(dev);
if (rc < 0) {
return rc;
}
return 0;
}
#if defined(CONFIG_FLASH_STM32_WRITE_PROTECT)
int flash_stm32_update_wp_sectors(const struct device *dev,
uint32_t changed_sectors,
uint32_t protected_sectors)
{
changed_sectors <<= FLASH_OPTCR_nWRP_Pos;
protected_sectors <<= FLASH_OPTCR_nWRP_Pos;
if ((changed_sectors & FLASH_OPTCR_nWRP_Msk) != changed_sectors) {
return -EINVAL;
}
/* Sector is protected when bit == 0. Flip protected_sectors bits */
protected_sectors = ~protected_sectors & changed_sectors;
return write_optb(dev, changed_sectors, protected_sectors);
}
int flash_stm32_get_wp_sectors(const struct device *dev,
uint32_t *protected_sectors)
{
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
*protected_sectors =
(~regs->OPTCR & FLASH_OPTCR_nWRP_Msk) >> FLASH_OPTCR_nWRP_Pos;
return 0;
}
#endif /* CONFIG_FLASH_STM32_WRITE_PROTECT */
#if defined(CONFIG_FLASH_STM32_READOUT_PROTECTION)
int flash_stm32_update_rdp(const struct device *dev, bool enable,
bool permanent)
{
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
uint8_t current_level, target_level;
current_level =
(regs->OPTCR & FLASH_OPTCR_RDP_Msk) >> FLASH_OPTCR_RDP_Pos;
target_level = current_level;
/*
* 0xAA = RDP level 0 (no protection)
* 0xCC = RDP level 2 (permanent protection)
* others = RDP level 1 (protection active)
*/
switch (current_level) {
case FLASH_STM32_RDP2:
if (!enable || !permanent) {
LOG_ERR("RDP level 2 is permanent and can't be changed!");
return -ENOTSUP;
}
break;
case FLASH_STM32_RDP0:
if (enable) {
target_level = FLASH_STM32_RDP1;
if (permanent) {
#if defined(CONFIG_FLASH_STM32_READOUT_PROTECTION_PERMANENT_ALLOW)
target_level = FLASH_STM32_RDP2;
#else
LOG_ERR("Permanent readout protection (RDP "
"level 0 -> 2) not allowed");
return -ENOTSUP;
#endif
}
}
break;
default: /* FLASH_STM32_RDP1 */
if (enable && permanent) {
#if defined(CONFIG_FLASH_STM32_READOUT_PROTECTION_PERMANENT_ALLOW)
target_level = FLASH_STM32_RDP2;
#else
LOG_ERR("Permanent readout protection (RDP "
"level 1 -> 2) not allowed");
return -ENOTSUP;
#endif
}
if (!enable) {
#if defined(CONFIG_FLASH_STM32_READOUT_PROTECTION_DISABLE_ALLOW)
target_level = FLASH_STM32_RDP0;
#else
LOG_ERR("Disabling readout protection (RDP "
"level 1 -> 0) not allowed");
return -EACCES;
#endif
}
}
/* Update RDP level if needed */
if (current_level != target_level) {
LOG_INF("RDP changed from 0x%02x to 0x%02x", current_level,
target_level);
write_optb(dev, FLASH_OPTCR_RDP_Msk,
(uint32_t)target_level << FLASH_OPTCR_RDP_Pos);
}
return 0;
}
int flash_stm32_get_rdp(const struct device *dev, bool *enabled,
bool *permanent)
{
FLASH_TypeDef *regs = FLASH_STM32_REGS(dev);
uint8_t current_level;
current_level =
(regs->OPTCR & FLASH_OPTCR_RDP_Msk) >> FLASH_OPTCR_RDP_Pos;
/*
* 0xAA = RDP level 0 (no protection)
* 0xCC = RDP level 2 (permanent protection)
* others = RDP level 1 (protection active)
*/
switch (current_level) {
case FLASH_STM32_RDP2:
*enabled = true;
*permanent = true;
break;
case FLASH_STM32_RDP0:
*enabled = false;
*permanent = false;
break;
default: /* FLASH_STM32_RDP1 */
*enabled = true;
*permanent = false;
}
return 0;
}
#endif /* CONFIG_FLASH_STM32_READOUT_PROTECTION */
/*
* Different SoC flash layouts are specified in across various
* reference manuals, but the flash layout for a given number of
* sectors is consistent across these manuals, with one "gotcha". The
* number of sectors is given by the HAL as FLASH_SECTOR_TOTAL.
*
* The only "gotcha" is that when there are 24 sectors, they are split
* across 2 "banks" of 12 sectors each, with another set of small
* sectors (16 KB) in the second bank occurring after the large ones
* (128 KB) in the first. We could consider supporting this as two
* devices to make the layout cleaner, but this will do for now.
*/
#ifndef FLASH_SECTOR_TOTAL
#error "Unknown flash layout"
#else /* defined(FLASH_SECTOR_TOTAL) */
#if FLASH_SECTOR_TOTAL == 5
static const struct flash_pages_layout stm32f4_flash_layout[] = {
/* RM0401, table 5: STM32F410Tx, STM32F410Cx, STM32F410Rx */
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
};
#elif FLASH_SECTOR_TOTAL == 6
static const struct flash_pages_layout stm32f4_flash_layout[] = {
/* RM0368, table 5: STM32F401xC */
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
{.pages_count = 1, .pages_size = KB(128)},
};
#elif FLASH_SECTOR_TOTAL == 8
static const struct flash_pages_layout stm32f4_flash_layout[] = {
/*
* RM0368, table 5: STM32F401xE
* RM0383, table 4: STM32F411xE
* RM0390, table 4: STM32F446xx
*/
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
{.pages_count = 3, .pages_size = KB(128)},
};
#elif FLASH_SECTOR_TOTAL == 12
static const struct flash_pages_layout stm32f4_flash_layout[] = {
/*
* RM0090, table 5: STM32F405xx, STM32F415xx, STM32F407xx, STM32F417xx
* RM0402, table 5: STM32F412Zx, STM32F412Vx, STM32F412Rx, STM32F412Cx
*/
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
{.pages_count = 7, .pages_size = KB(128)},
};
#elif FLASH_SECTOR_TOTAL == 16
static const struct flash_pages_layout stm32f4_flash_layout[] = {
/* RM0430, table 5.: STM32F413xx, STM32F423xx */
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
{.pages_count = 11, .pages_size = KB(128)},
};
#elif FLASH_SECTOR_TOTAL == 24
static const struct flash_pages_layout stm32f4_flash_layout[] = {
/*
* RM0090, table 6: STM32F427xx, STM32F437xx, STM32F429xx, STM32F439xx
* RM0386, table 4: STM32F469xx, STM32F479xx
*/
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
{.pages_count = 7, .pages_size = KB(128)},
{.pages_count = 4, .pages_size = KB(16)},
{.pages_count = 1, .pages_size = KB(64)},
{.pages_count = 7, .pages_size = KB(128)},
};
#else
#error "Unknown flash layout"
#endif /* FLASH_SECTOR_TOTAL == 5 */
#endif/* !defined(FLASH_SECTOR_TOTAL) */
void flash_stm32_page_layout(const struct device *dev,
const struct flash_pages_layout **layout,
size_t *layout_size)
{
ARG_UNUSED(dev);
*layout = stm32f4_flash_layout;
*layout_size = ARRAY_SIZE(stm32f4_flash_layout);
}