/* * Copyright (c) 2018 Aurelien Jarno * * SPDX-License-Identifier: Apache-2.0 */ #define DT_DRV_COMPAT atmel_sam_flash_controller #define SOC_NV_FLASH_NODE DT_INST(0, soc_nv_flash) #define FLASH_WRITE_BLK_SZ DT_PROP(SOC_NV_FLASH_NODE, write_block_size) #define FLASH_ERASE_BLK_SZ DT_PROP(SOC_NV_FLASH_NODE, erase_block_size) #include #include #include #include #include #include #define LOG_LEVEL CONFIG_FLASH_LOG_LEVEL #include LOG_MODULE_REGISTER(flash_sam0); /* * The SAM flash memories use very different granularity for writing, * erasing and locking. In addition the first sector is composed of two * 8-KiB small sectors with a minimum 512-byte erase size, while the * other sectors have a minimum 8-KiB erase size. * * For simplicity reasons this flash controller driver only addresses the * flash by 8-KiB blocks (called "pages" in the Zephyr terminology). */ /* * We only use block mode erases. The datasheet gives a maximum erase time * of 200ms for a 8KiB block. */ #define SAM_FLASH_TIMEOUT_MS 220 struct flash_sam_dev_cfg { Efc *regs; }; struct flash_sam_dev_data { struct k_sem sem; }; static const struct flash_parameters flash_sam_parameters = { .write_block_size = FLASH_WRITE_BLK_SZ, .erase_value = 0xff, }; #define DEV_CFG(dev) \ ((const struct flash_sam_dev_cfg *const)(dev)->config_info) #define DEV_DATA(dev) \ ((struct flash_sam_dev_data *const)(dev)->driver_data) static inline void flash_sam_sem_take(struct device *dev) { k_sem_take(&DEV_DATA(dev)->sem, K_FOREVER); } static inline void flash_sam_sem_give(struct device *dev) { k_sem_give(&DEV_DATA(dev)->sem); } /* Check that the offset is within the flash */ static bool flash_sam_valid_range(struct device *dev, off_t offset, size_t len) { if (offset > CONFIG_FLASH_SIZE * 1024) { return false; } if (len && ((offset + len - 1) > (CONFIG_FLASH_SIZE * 1024))) { return false; } return true; } /* Convert an offset in the flash into a page number */ static off_t flash_sam_get_page(off_t offset) { return offset / IFLASH_PAGE_SIZE; } /* * This function checks for errors and waits for the end of the * previous command. */ static int flash_sam_wait_ready(struct device *dev) { Efc *const efc = DEV_CFG(dev)->regs; uint64_t timeout_time = k_uptime_get() + SAM_FLASH_TIMEOUT_MS; uint32_t fsr; do { fsr = efc->EEFC_FSR; /* Flash Error Status */ if (fsr & EEFC_FSR_FLERR) { return -EIO; } /* Flash Lock Error Status */ if (fsr & EEFC_FSR_FLOCKE) { return -EACCES; } /* Flash Command Error */ if (fsr & EEFC_FSR_FCMDE) { return -EINVAL; } /* * ECC error bits are intentionally not checked as they * might be set outside of the programming code. */ /* Check for timeout */ if (k_uptime_get() > timeout_time) { return -ETIMEDOUT; } } while (!(fsr & EEFC_FSR_FRDY)); return 0; } /* This function writes a single page, either fully or partially. */ static int flash_sam_write_page(struct device *dev, off_t offset, const void *data, size_t len) { Efc *const efc = DEV_CFG(dev)->regs; const uint32_t *src = data; uint32_t *dst = (uint32_t *)((uint8_t *)CONFIG_FLASH_BASE_ADDRESS + offset); LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); /* We need to copy the data using 32-bit accesses */ for (; len > 0; len -= sizeof(*src)) { *dst++ = *src++; } __DSB(); /* Trigger the flash write */ efc->EEFC_FCR = EEFC_FCR_FKEY_PASSWD | EEFC_FCR_FARG(flash_sam_get_page(offset)) | EEFC_FCR_FCMD_WP; __DSB(); /* Wait for the flash write to finish */ return flash_sam_wait_ready(dev); } /* Write data to the flash, page by page */ static int flash_sam_write(struct device *dev, off_t offset, const void *data, size_t len) { int rc; const uint8_t *data8 = data; LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); /* Check that the offset is within the flash */ if (!flash_sam_valid_range(dev, offset, len)) { return -EINVAL; } if (!len) { return 0; } /* * Check that the offset and length are multiples of the write * block size. */ if ((offset % FLASH_WRITE_BLK_SZ) != 0) { return -EINVAL; } if ((len % FLASH_WRITE_BLK_SZ) != 0) { return -EINVAL; } flash_sam_sem_take(dev); rc = flash_sam_wait_ready(dev); if (rc < 0) { return rc; } while (len > 0) { size_t eop_len, write_len; /* Maximum size without crossing a page */ eop_len = -(offset | ~(IFLASH_PAGE_SIZE - 1)); write_len = MIN(len, eop_len); rc = flash_sam_write_page(dev, offset, data8, write_len); if (rc < 0) { goto done; } offset += write_len; data8 += write_len; len -= write_len; } done: flash_sam_sem_give(dev); return rc; } /* Read data from flash */ static int flash_sam_read(struct device *dev, off_t offset, void *data, size_t len) { LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); if (!flash_sam_valid_range(dev, offset, len)) { return -EINVAL; } memcpy(data, (uint8_t *)CONFIG_FLASH_BASE_ADDRESS + offset, len); return 0; } /* Erase a single 8KiB block */ static int flash_sam_erase_block(struct device *dev, off_t offset) { Efc *const efc = DEV_CFG(dev)->regs; LOG_DBG("offset = 0x%lx", (long)offset); efc->EEFC_FCR = EEFC_FCR_FKEY_PASSWD | EEFC_FCR_FARG(flash_sam_get_page(offset) | 2) | EEFC_FCR_FCMD_EPA; __DSB(); return flash_sam_wait_ready(dev); } /* Erase multiple blocks */ static int flash_sam_erase(struct device *dev, off_t offset, size_t len) { int rc = 0; off_t i; LOG_DBG("offset = 0x%lx, len = %zu", (long)offset, len); if (!flash_sam_valid_range(dev, offset, len)) { return -EINVAL; } if (!len) { return 0; } /* * Check that the offset and length are multiples of the write * erase block size. */ if ((offset % FLASH_ERASE_BLK_SZ) != 0) { return -EINVAL; } if ((len % FLASH_ERASE_BLK_SZ) != 0) { return -EINVAL; } flash_sam_sem_take(dev); /* Loop through the pages to erase */ for (i = offset; i < offset + len; i += FLASH_ERASE_BLK_SZ) { rc = flash_sam_erase_block(dev, i); if (rc < 0) { goto done; } } done: flash_sam_sem_give(dev); /* * Invalidate the cache addresses corresponding to the erased blocks, * so that they really appear as erased. */ SCB_InvalidateDCache_by_Addr((void *)(CONFIG_FLASH_BASE_ADDRESS + offset), len); return rc; } /* Enable or disable the write protection */ static int flash_sam_write_protection(struct device *dev, bool enable) { Efc *const efc = DEV_CFG(dev)->regs; int rc = 0; flash_sam_sem_take(dev); if (enable) { rc = flash_sam_wait_ready(dev); if (rc < 0) { goto done; } efc->EEFC_WPMR = EEFC_WPMR_WPKEY_PASSWD | EEFC_WPMR_WPEN; } else { efc->EEFC_WPMR = EEFC_WPMR_WPKEY_PASSWD; } done: flash_sam_sem_give(dev); return rc; } #if CONFIG_FLASH_PAGE_LAYOUT /* * The notion of pages is different in Zephyr and in the SAM documentation. * Here a page refers to the granularity at which the flash can be erased. */ static const struct flash_pages_layout flash_sam_pages_layout = { .pages_count = DT_REG_SIZE(SOC_NV_FLASH_NODE) / FLASH_ERASE_BLK_SZ, .pages_size = DT_PROP(SOC_NV_FLASH_NODE, erase_block_size), }; void flash_sam_page_layout(struct device *dev, const struct flash_pages_layout **layout, size_t *layout_size) { *layout = &flash_sam_pages_layout; *layout_size = 1; } #endif static const struct flash_parameters * flash_sam_get_parameters(const struct device *dev) { ARG_UNUSED(dev); return &flash_sam_parameters; } static int flash_sam_init(struct device *dev) { struct flash_sam_dev_data *const data = DEV_DATA(dev); k_sem_init(&data->sem, 1, 1); return 0; } static const struct flash_driver_api flash_sam_api = { .write_protection = flash_sam_write_protection, .erase = flash_sam_erase, .write = flash_sam_write, .read = flash_sam_read, .get_parameters = flash_sam_get_parameters, #ifdef CONFIG_FLASH_PAGE_LAYOUT .page_layout = flash_sam_page_layout, #endif }; static const struct flash_sam_dev_cfg flash_sam_cfg = { .regs = (Efc *)DT_INST_REG_ADDR(0), }; static struct flash_sam_dev_data flash_sam_data; DEVICE_AND_API_INIT(flash_sam, DT_INST_LABEL(0), flash_sam_init, &flash_sam_data, &flash_sam_cfg, POST_KERNEL, CONFIG_KERNEL_INIT_PRIORITY_DEVICE, &flash_sam_api);